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May 28, 2014
16:08 EDTNOCNorthrop Grumman begins sampling new compact InP ultra-LNA
Northrop Grumman has developed two high performance Monolithic Microwave Integrated Circuit, or MMIC, broadband ultra-low-noise amplifiers, or LNA, that are in production for immediate delivery. The cost-effective indium phosphide, or InP, high electron mobility transistor, or HEMT, LNAs are for use in E-band and W-band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios. The compact die design of each LNA considerably reduces footprint size and exhibits unmatched ultra-low-noise performance and high gain.
News For NOC From The Last 14 Days
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August 31, 2015
12:32 EDTNOCNorthrop Grumman wins $35.37M CIRCM contract with U.S. Army
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August 27, 2015
15:01 EDTNOCNorthrop Grumman awarded position on TSA III contract
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August 26, 2015
17:03 EDTNOCNorthrop Grumman awards second Australian supplier contract
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