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February 25, 2013
06:52 EDTGTATGT Advanced, Soitec enter development, licensing agreement, terms not disclosed
GT Advanced Technologies and Soitec announced a development agreement and a licensing agreement allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system to produce high-quality GaN epi layers on substrates used in the LED and other growth industries such as power electronics. The higher growth rates and improved material properties made possible by the HVPE system are expected to significantly reduce process costs while boosting device performance compared with the traditional MOCVD process. Initial pre-payment of the licensing fees as outlined in the agreement is already underway, but further specific terms were not disclosed. GT will develop, manufacture and commercialize the HVPE system incorporating Soitec Phoenix Labs', a subsidiary of Soitec, HVPE technology including its novel and advanced source delivery system that is expected to lower the costs of precursors delivered to the HVPE reactor. The HVPE system will enable the production of GaN template sapphire substrates at scale. The expected target date for the commercial availability of the HVPE system is the second half of 2014.
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